View IRF5305L_4963.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 91386C
IRF5305S/L
HEXFET(R) Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V RDS(on) = 0.06
G
ID = -31A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-31 -22 -110 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
--- ---
Max.
1.4 40
Units
C/W
4/1/99
IRF5305S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- --- --- --- --- --- --- 14 66 39 63 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -10V, ID = -16A -4.0 V VDS = VGS, ID = -250A --- S VDS = -25V, ID = -16A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 ID = -16A 13 nC VDS = -44V 29 VGS = -10V, See Fig. 6 and 13 --- VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- -31 showing the A G integral reverse --- --- -110 p-n junction diode. S --- --- -1.3 V TJ = 25C, IS = -16A, VGS = 0V --- 71 110 ns TJ = 25C, IF = -16A --- 170 250 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%.
Uses IRF5305 data and test conditions
VDD = -25V, Starting TJ = 25C, L = 2.1mH
RG = 25, I AS = -16A. (See Figure 12)
TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
ISD -16A, di/dt -280A/s, VDD V(BR)DSS,
2
www.irf.com
IRF5305S/L
1000
TOP VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V
1000
-ID , D rain-to-S ource C urrent (A )
-ID , D rain-to-S ourc e C urrent (A )
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
100
10
10
-4 .5V 20 s P U L S E W ID TH TJc==25C T 25 C A
0.1 1 10 100
-4 .5 V 20 s P U L S E W ID T H TJ = 17 5C TC = 175C
0.1 1 10
1
1
A
100
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 2 5C TJ = 17 5 C
R D S (on ) , D rain -to-S ou rc e O n R es is tan c e (N orm a liz ed)
I D = -2 7A
-I D , D rain-to -So urc e C urre nt (A )
1.5
10
1.0
0.5
1 4 5 6 7
V DS = -2 5 V 2 0 s P U L S E W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = -1 0V
100 120 140 160 180
A
-V G S , G ate -to-Source Volta ge (V )
T J , J unc tion T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF5305S/L
2500
2000
C iss C oss
1500
1000
-V G S , G ate-to-S ource V oltage (V)
V GS C iss C rs s C o ss
= = = =
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
20
I D = -16 A V D S = -4 4V V D S = -2 8V
16
C, C apacitanc e (pF )
12
8
C rss
500
4
0 1 10 100
A
0 0 10 20 30
FO R TE S T C IR C U IT S E E FIG U R E 1 3
40 50 60
A
-V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-IS D , R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)
-ID , D rain C urrent (A )
100
100
100 s
TJ = 17 5 C T J = 2 5C
10 1m s
10 0.4 0.8 1.2 1.6
VG S = 0 V
A
1 1
T C = 25 C T J = 17 5C S ing le P u lse
10
10m s
2.0
100
A
-VS D , S ourc e-to-D rain V oltage (V )
-VD S , D rain-to-S ourc e V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF5305S/L
V DS
35
RD
VGS RG
D.U.T.
+
30
-ID , Drain Current (A)
25
-10V
Pulse Width 1 s Duty Factor 0.1 %
20 15
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
10
VGS
5
10%
0 25 50 75 100 125 150 175
90% VDS
TC , Case Temperature
( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2
0.1
0.05 0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
-
V DD
5
IRF5305S/L
700 VDS L
E A S , S ingle P ulse A valanche E nergy (m J)
TO P
600
B O TTO M
500
ID -6 .6A -1 1A -16 A
RG
D .U .T IA S D R IV E R
0 .0 1
VD D A
-2 0 V tp
400
300
15V
200
Fig 12a. Unclamped Inductive Test Circuit
100
0
V D D = -2 5V
25 50 75 100 125 150
A
175
IAS
S tarting T J , J unc tion T em perature (C )
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
+
QGS
QGD
D.U.T.
-
-10V
VDS
IRF5305S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
www.irf.com
7
IRF5305S/L
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F.
6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
8
www.irf.com
IRF5305S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
www.irf.com
9
IRF5305S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L
10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
F E E D D IRE C TIO N
13.50 (.532 ) 12.80 (.504 )
2 7.4 0 (1.079) 2 3.9 0 (.9 41)
4
33 0.00 (1 4.1 73) MA X.
60.00 (2.3 62) MIN .
NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .
26 .40 (1.03 9) 24 .40 (.961 ) 3
3 0.40 (1.1 97) MAX. 4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 4/99
10
www.irf.com

▲Up To Search▲

Price & Availability of IRF5305L

	To Download IRF5305L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .